Hybrid laser including anti-resonant waveguides

ABSTRACT

Described are embodiments of apparatuses and systems including a hybrid laser including anti-resonant waveguides, and methods for making such apparatuses and systems. A hybrid laser apparatus may include a first semiconductor region including an active region of one or more layers of semiconductor materials from group III, group IV, or group V semiconductor, and a second semiconductor region coupled with the first semiconductor region and having an optical waveguide, a first trench disposed on a first side of the optical waveguide, and a second trench disposed on a second side, opposite the first side, of the optical waveguide. Other embodiments may be described and/or claimed.

TECHNICAL FIELD

Embodiments of the invention relate generally to the field of lasers.More particularly, embodiments of the invention relate to an apparatusincluding a hybrid laser including anti-resonant waveguides, and asystem including the hybrid laser having anti-resonant waveguides.

BACKGROUND

Semiconductor lasers may be made from light-emitting properties of III-Vsemiconductor materials. Semiconductor lasers may be composed of twocomponents, an III-V active region to generate light and a siliconwaveguide to carry the generated light.

The optical mode of some hybrid lasers may be controlled by thewaveguide dimensions. In general, a high overlap of the optical modewith the III-V region of the hybrid laser is desired. Pushing theoptical mode into the III-V region, however, may sometimes result inoptical mode leakage and/or widening of the optical mode.

BRIEF DESCRIPTION OF THE DRAWINGS

Embodiments of the present disclosure will be described by way ofexample embodiments, but not limitations, illustrated in theaccompanying drawings in which like references denote similar elements,and in which:

FIG. 1 illustrates a cross-section of a hybrid laser includinganti-resonant waveguides;

FIG. 2 illustrates a cross-section of an active region of a hybrid laserincluding anti-resonant waveguides;

FIG. 3 illustrates a cross-section of another hybrid laser includinganti-resonant waveguides;

FIG. 4 is a graph showing calculated leakage loss of a hybrid laserincluding anti-resonant trenches and a hybrid laser not includinganti-resonant waveguides;

FIG. 5 illustrates a cross-section of another hybrid laser includinganti-resonant waveguides;

FIG. 6 illustrates an optical system having one or more of the hybridlasers of FIG. 1, FIG. 3, or FIG. 5;

FIG. 7 illustrates another optical system having one or more of thehybrid lasers of FIG. 1, FIG. 3, or FIG. 5;

FIG. 8 is a flow chart of a method to form a hybrid laser includinganti-resonant waveguides; and

FIG. 9 is a block diagram of a system incorporating one or more of thehybrid lasers of FIG. 1, FIG. 3, or FIG. 5 and/or optical system of FIG.6 and/or optical system of FIG. 7;

all in accordance with embodiments of the present disclosure.

DETAILED DESCRIPTION

Described herein are embodiments of an apparatus including a hybridlaser including anti-resonant waveguides, a system including the hybridlaser having anti-resonant waveguides, and a method for forming a hybridlaser including anti-resonant waveguides.

In the following description, numerous details are discussed to providean explanation of various embodiments. It will be apparent to thoseskilled in the art, however, that embodiments of the present inventionmay be practiced without these specific details. In other instances,well-known structures and devices may be shown in block diagram form,rather than in detail, in order to avoid obscuring embodiments of thepresent invention. For example, the height and/or depth of each layerforming the active region is not described herein. Furthermore, theembodiments of the invention are not limited to a particular compositionand material system of the active region as long as the composition ofthe active region allows for a hybrid laser including anti-resonantwaveguides as discussed in the embodiments.

FIG. 1 illustrates a cross-section of a hybrid laser apparatus 100including a first semiconductor region 102 and a second semiconductorregion 104 coupled with the first semiconductor region 102. The firstsemiconductor region 102 may include an active region 106 and one ormore electrical contacts 107, 108 coupled with the active region 106 toprovide an electrical current to the active region 106. The firstsemiconductor region 102 may include an insulating material 110 coveringportions of the active region 106 and/or the first semiconductor region102.

The second semiconductor region 104 may include an optical waveguide 112indicated generally by the region demarcated by the hashed-line box. Theoptical waveguide 112 may be defined by a pair of waveguide trenches 114a, 114 b. In various embodiments, anti-resonance waveguides may includeanti-resonance waveguide trenches 116 a, 118 a may be disposed on afirst side of the optical waveguide 112, and anti-resonance waveguidetrenches 116 b, 118 b may be disposed on a second side, opposite thefirst side, of the optical waveguide 112, as shown. The waveguidetrenches 114 a, 114 b and the anti-resonant waveguide trenches 116 a,116 b, 118 a, 118 b may be filled with a gas. In various embodiments,the gas may be air, an inert gas, or other gas. In some embodiments, thegas may be any gas that may be trapped in the trenches 114 a, 114 b, 116a, 116 b, 118 a, or 118 b during processing. In other embodiments, thewaveguide trenches 114 a, 114 b and/or the anti-resonant waveguidetrenches 116 a, 116 b, 118 a, 118 b may be filled with anotherlow-refractive index material such as, for example, silicon oxide orsilicon nitride.

The trenches 116 a, 116 b, 118 a, 118 b may provide anti-resonantreflection to control the optical mode width while still allowing theoptical waveguide 112 to control the overlap of the optical mode withthe active region 106. In various embodiments, the trenches 116 a, 116b, 118 a, 118 b may provide additional reflections of the optical modeduring operation of the hybrid laser apparatus 100, which may helpcontrol the lateral extension of the optical mode.

The second semiconductor region 104 may comprise any suitable materialor materials for forming a hybrid laser apparatus. In variousembodiments, the second semiconductor region 104 may comprise asemiconductor substrate. For example, the second semiconductor region104 may comprise a silicon-on-insulator substrate comprising a handlesubstrate 109, a buried insulating layer 111 on the handle substrate109, and a silicon layer 113 on the buried insulating layer 111. Theburied insulating 111 may comprise oxide. In various embodiments, theburied insulating 111 may comprise sapphire or another suitableinsulating material. The handle substrate 109 may comprise silicon, suchas, for example, doped silicon. The silicon layer 113 may comprise adevice fabrication wafer or epitaxial silicon. In various embodiments,the silicon layer 113 may comprise <100> silicon.

In other implementations, the second semiconductor region 104 may beformed using alternate materials, which may or may not be combined withsilicon, that include but are not limited to germanium, indiumantimonide, lead telluride, indium arsenide, indium phosphide, galliumarsenide, or gallium antimonide. Further materials classified as groupIII-V or group IV materials may also be used to form the substrate.Although a few examples of materials from which the substrate may beformed are described here, any material that may serve as a foundationupon which a semiconductor device may be built falls within the spiritand scope of the present invention.

The active region 106 of the first semiconductor region 102 may be aIII-V active region including layers of semiconductor materials fromgroup III, group IV, or group V semiconductor. FIG. 2 illustrates across-section of an example III-V active region 206, according tovarious embodiments of the invention. In various embodiments, thecontact 108 (shown in FIG. 1) may be coupled to layer 220. In oneembodiment, the layer 220 is an ohmic contact layer. In one embodiment,the ohmic contact layer 220 is composed of p-type indium galliumarsenide (InGaAs). The layer 220 may be coupled to a cladding layer 222.In one embodiment, the cladding layer 222 is composed of p-type indiumphosphide (InP). The cladding layer 222 may be coupled to a separatedconfinement hetero-structure (SCH) layer 224. In one embodiment, thelayer 224 is composed of p-type aluminum gallium indium arsenide(AlGaInAs). The layer 224 may be coupled to a carrier blocking layer226. In one embodiment the layer 226 is also composed of AlGaInAs. Thelayer 226 may be coupled to a multiple quantum well (MQW) layer 228. Inone embodiment, the MQW layer 228 is composed from AlGaInAs. The MQWlayer 228 may be coupled to the layer 230 (shown as layer 130 in FIG.1), which may be composed of n-type indium phosphide (InP). The layersdiscussed above may have slight differences in their atomic ratios totune the exact bandgap, according to one embodiment of the invention.

The silicon layer 113 of the second semiconductor region 104 may providea path of electric current to the contacts 107. Referring again to FIG.1, the layer 130 (layer 230 of FTG. 2, in some embodiments) may extendlaterally on either side of the active region 106 (see dotted extensionof layer 230 of FIG. 2) to connect with the electrical contacts 107, andthe optical waveguide 112 may be formed directly under the layer 130. Inone embodiment, trenches 114 a, 114 b formed on the sides of the opticalwaveguide 112 confine light within the waveguide 112. The opticalwaveguide 112 may carry the optical signal in the form of a laser, whichmay be generated by applying a voltage potential across the contacts 107and 108. In one embodiment, the potential difference across the contacts107 and 108 may be such that a current 132 of 30-150 mA flows from thecontact 108 to the contact 107 via the layer 130 to cause the generationof an optical laser in the optical waveguide 112. In one embodiment, thecontact 108 may be operable to receive a positive voltage potentialwhile the contact 107 may be operable to receive a negative voltagepotential.

In other embodiments, the layer 230 does not extend laterally on eitherside of the active region 206, as shown by layer 330 of FIG. 3. In suchan embodiment, the electric current 332 flows into the silicon layer 113of the second semiconductor region 204 and out to the contacts 107. Inone embodiment, such conductive interface enables the silicon layer 113to act as an electrical contact by itself.

In various embodiments, the spacing and/or width of the anti-resonantwaveguide trenches 116 a, 116 b, 118 a, 118 b and the waveguide trenches114 a, 114 b may contribute to the optical leakage loss of the hybridlaser apparatus 100 and/or the location of the optical mode. The opticalwaveguide 112 may have a width configured for providing a suitableoptical mode overlap with the active region 106. In various embodiments,the width of the optical waveguide 112 may be about 0.4 μm. In variousembodiments, the trenches 114 a, 116 a, and 118 b may separated fromeach other by about 1.0 μm (i.e., about 1.0 μm of the silicon layer 113separates the waveguide trench 114 a from the anti-resonant waveguidetrench 116 a, and about 1.0 μm of the silicon layer 113 separates theanti-resonant waveguide trench 116 a from the anti-resonant waveguidetrench 118 a). The other side of the optical waveguide 112 may besimilarly configured.

In various embodiments, the waveguide trenches 114 a, 114 b may eachhave a width of about 0.5 μm. In other embodiments, the waveguidetrenches 114 a, 114 b may each have a width of about 3.0 μm. In otherembodiments, the waveguide trenches 114 a, 114 b may each have a widthin a range of about 0.5 μm to about 3.0 μm.

FIG. 4 is a graph showing calculated leakage loss of a hybrid laserincluding anti-resonant waveguide trenches and a hybrid laser notincluding anti-resonant waveguide trenches. In all three examples, theoptical waveguide width is about 0.4 μm. As shown, both examples of thehybrid laser including anti-resonant waveguide trenches (shown by thetriangle and diamond data points) have a greater than 100 timesreduction in leakage loss as compared to the hybrid laser not includinganti-resonant waveguide trenches (shown by the square data points). Inother words, various embodiments of the hybrid lasers described hereinmay allow for less optical leakage when increasing the optical modeoverlap with the active region.

In the embodiments shown in FIG. 1 and FIG. 3, two anti-resonantwaveguide trenches (116 a, 118 a and 116 b, 118 b) are provided on eachside of the optical waveguide 112 and its associated waveguide trenches114 a, 114 b. In other embodiments, more or fewer anti-resonantwaveguide trenches may be provided. As shown in FIG. 5, for example, thehybrid laser apparatus 500 includes one anti-resonant waveguide trench116 a, 116 b on each side of the optical waveguide 112 and itsassociated waveguide trenches 114 a, 114 b. In other embodiments, morethan two anti-resonant waveguide trenches (not illustrated) may beprovided on each on each side of the optical waveguide 112 and itsassociated waveguide trenches 114 a, 114 b.

FIG. 6 illustrates an optical system 600 having one or more of thehybrid lasers 634 _(1-N), one or more of which may be a laser such aslaser 100, 300, or 500, described herein. The hybrid lasers 634 _(1-N)may be located in an optical transmitter, according to one embodiment ofthe invention. In one embodiment, the system 600 comprises one or moreoptical transmitters 632 _(1-N). Each optical transmitter from theoptical transmitters 632 _(1-N) may comprise a hybrid laser unit 634_(1-N) coupled to a transmitter 636 _(1-N). In one embodiment, thetransmitter 636 _(1-N) transmits an optical signal of differentwavelengths via multiplexer 638, optical waveguide 640, andde-multiplexer 642. In one embodiment, the wavelengths range fromwavelengths of less than 900 nm or wavelengths from a range of 1260 nmto 1380 nm. In one embodiment, the transmitter 636 _(1-N) comprises amodulator (not shown) that receives the laser beam generated by thehybrid laser unit 634 _(1-N) and modulates the laser beam, wherein themodulated beam is then transmitted over the optical waveguide 640 to anoptical receiver 644 _(1-N).

In one embodiment, each optical receiver from among the opticalreceivers 644 _(1-N) comprises a receiver 646 _(1-N) coupled to anoptical to electrical conversion unit 648 _(1-N). In one embodiment, thereceiver 646 _(1-N) comprises an array of photo-detectors. In oneembodiment, the de-multiplexer 642 couples an optical transmitter fromamong the optical transmitters 632 _(1-N) to a corresponding opticalreceiver from among the optical receivers 644 _(1-N). In one embodiment,the optical waveguide 640 is an optical Universal Serial Bus (USB)cable. In one embodiment the optical waveguide 640 is an optic fibercable. In one embodiment, the optical transmitters 632 _(1-N) andreceivers 644 _(1-N) reside in their respective computer systems (notshown). In various embodiments, the lasers 634 _(1-N) and/orphoto-detectors of the receiver 646 _(1-N) can be coupled to respectiveprocessors, or to the same processor, to provide input/output. In someof these embodiments, the lasers 634 _(1-N) and/or photo-detectors ofthe receiver 646 _(1-N) can be coupled to their respective processors,or to the same processor, to provide input/output through an I/Omanagement chip.

FIG. 7 shows an embodiment in which optical transmitters 732 _(1-N),including lasers 734 _(1-N) and transmitters 736 _(1-N), and receivers744 _(1-N), including receiver 646 _(1-N) and optical to electricalconversion units 648 _(1-N), reside on the same processor 750. Invarious ones of these embodiments, the receivers 746 _(1-N) comprises anarray of photo-detectors may be configured to receive input(s) from asource other than the processor 750. Likewise, in various embodiments,the transmitters 736 _(1-N) configured to output optical signal(s) to adestination other than the processor 750.

FIG. 8 is a flow diagram of some of the operations associated withmethod 800 for making an apparatus including a photonic device (100 or400 described herein, for example) having a conductive shunt substrate,in accordance with various embodiments.

Turning now to FIG. 8, a method for making an apparatus including thehybrid laser including anti-resonant waveguide trenches (such as, forexample, hybrid laser apparatus 100, 300, or 500) may include one ormore functions, operations, or actions as is illustrated by block 802,804, 806, 808, and/or 810.

Processing for the method 800 may start with block 802 by providing afirst semiconductor region including an active region of one or morelayers of semiconductor materials from group III, group IV, or group Vsemiconductor.

The method 800 may proceed to block 804 by defining an optical waveguidein a second semiconductor region by forming a pair of waveguidetrenches.

The method 800 may then proceed to block 806 by forming a first trenchon a first side of an optical waveguide, and a second trench on a secondside, opposite the first side, of the optical waveguide. In variousembodiments, the operations of blocks 804 and 806 may be performedduring a single operation.

At block 810, the method 800 may proceed by coupling the firstsemiconductor region with the second semiconductor region to form thehybrid laser apparatus.

In various embodiments, the method 800 may optionally proceed from block806 to block 808 by forming a third trench on the first side of theoptical waveguide such that the first trench is between the third trenchand the optical waveguide, and forming a fourth trench on the secondside of the optical waveguide such that the second trench is between thefourth trench and the optical waveguide. In various embodiments, theoperations of blocks 804, 806, and 808 may be performed during a singleoperation. In other embodiments, the operations of blocks 806 and 808may be performed during a single operation, and the operations of block804 may be performed prior to or after the single operation. Afteroptional block 808, the method 800 may proceed to block 810.

In one embodiment, the method of FIG. 8 can be performed by executingmachine-readable instructions by a processor, wherein themachine-readable instructions are stored on a machine-readable storagemedium (e.g., a flash memory, a dynamic random access memory, a staticrandom access memory, etc.) coupled to the processor.

Embodiments of hybrid laser apparatuses and/or optical systems describedherein may be incorporated into various other apparatuses and systemsincluding, but not limited to, various computing and/or consumerelectronic devices/appliances. A system level block diagram of anexample system 900 is illustrated in FIG. 9. The hybrid laserapparatuses and/or optical systems described herein may be included inone or more of the elements of the system 900. For example, in variousimplementations, the processor 908, the chipset 918, the communicationchip 904, and/or the I/O controller hub 906 may include a transmitter632 and receiver 644 (of FIG. 6) and/or transmitter 732 and receiver 744(of FIG. 7) having the hybrid laser apparatus 100 (of FIG. 1), 300 (ofFIG. 3), and/or 500 (of FIG. 5) for communicating with one or more otherelements of the system 900 or connected to the system 900. In variousembodiments, the system 900 may include more or fewer components, and/ordifferent architectures than that shown in FIG. 9.

In various implementations, the system 900 may be a laptop, a netbook, anotebook, an ultrabook, a smartphone, a tablet, a personal digitalassistant (PDA), an ultra mobile PC, a mobile phone, a desktop computer,a server, a printer, a scanner, a monitor, a set-top box, anentertainment control unit, a digital camera, a portable music player,or a digital video recorder. In further implementations, the system 900may be any other electronic device that processes data.

The system 900 may include a communications cluster 902 operatively tofacilitate communication of the system 900 over one or more networksand/or with any other suitable device. The communications cluster 902may include at least one communication chip 904 and at least one I/Ocontroller hub 906. In some implementations, the at least one I/Ocontroller hub 906 may be part of the at least one communication chip904. In some implementations the at least one communication chip 904 maybe part of the processor 908.

In various embodiments, the system 900 may house a motherboard 910 withwhich the processor 908 and/or the communications cluster 902 may bephysically and electrically coupled.

Depending on its applications, the system 900 may include othercomponents that may or may not be physically and electrically coupled tothe mother board. These other components include, but are not limitedto, volatile memory 912 (e.g., DRAM), non-volatile memory 914 (e.g.,ROM), flash memory, a graphics processor 916, a digital signalprocessor, a crypto processor, a chipset 918, a battery 920, an audiocodec, a video codec, a power amplifier 922, a global positioning system(GPS) device 924, a compass 926, an accelerometer, a gyroscope, aspeaker 928, a camera 930, an antenna 932, and a mass storage device(such as hard disk drive, compact disk (CD), digital versatile disk(DVD), and so forth).

The communication chip 904 may enable wireless communications for thetransfer of data to and from the system 900. The term “wireless” and itsderivatives may be used to describe circuits, devices, systems, methods,techniques, communications channels, etc., that may communicate datathrough the use of modulated electromagnetic radiation through anon-solid medium. The term does not imply that the associated devices donot contain any wires, although in some embodiments they might not. Thecommunication chip 904 may implement any of a number of wirelessstandards or protocols, including but not limited to Wi-Fi (IEEE 802.11family), WiMAX (IEEE 802.16 family), IEEE 802.20, long term evolution(LTE), Ev-DO, HSPA+, HSDPA+, HSUPA+, EDGE, GSM, GPRS, CDMA, TDMA, DECT,Bluetooth, derivatives thereof, as well as any other wireless protocolsthat are designated as 2G, 3G, 4G, 5G, and beyond. The system 900 mayinclude a plurality of communication chips 904. For instance, a firstcommunication chip may be dedicated to shorter range wirelesscommunications such as Wi-Fi and Bluetooth and a second communicationchip may be dedicated to longer range wireless communications such asGPS, EDGE, GPRS, CDMA, WiMAX, LTE, Ev-DO, and others.

The system 900 may include a display device 934, such as, for example, acathode ray tube (CRT), liquid crystal display (LCD), light emittingdiode (LED), or other suitable display device. The display device 934may be a touch screen display supporting touch screen features, and invarious one of these embodiments, the I/O controller 906 may include atouchscreen controller. In various embodiments, the display device 934may be a peripheral device interconnected with the system 900.

The processor 908 of the system 900 may include an integrated circuitdie packaged within the processor 908. In some implementations, theintegrated circuit die of the processor 908 may include one or moredevices, such as transistors or metal interconnects. The term“processor” may refer to any device or portion of a device thatprocesses electronic data from registers and/or memory to transform thatelectronic data into other electronic data that may be stored inregisters and/or memory. The communication chip 904 may also include anintegrated circuit die packaged within the communication chip 904. TheI/O controller hub 906 may also include an integrated circuit diepackaged within the I/O controller hub 906.

The following paragraphs describe various embodiments.

In various embodiments, a hybrid laser apparatus may comprise a firstsemiconductor region including an active region of one or more layers ofsemiconductor materials from group III, group IV, or group Vsemiconductor. In various embodiments, the apparatus may furthercomprise a second semiconductor region coupled with the firstsemiconductor region and having an optical waveguide, a first trenchdisposed on a first side of the optical waveguide, and a second trenchdisposed on a second side, opposite the first side, of the opticalwaveguide.

In various embodiments, the optical waveguide is defined by a pair ofwaveguide trenches.

In various embodiments, the second semiconductor region includes a thirdtrench disposed on the first side of the optical waveguide such that thefirst trench is between the third trench and the optical waveguide, anda fourth trench disposed on the second side of the optical waveguidesuch that the second trench is between the fourth trench and the opticalwaveguide.

In various embodiments, a layer of the first semiconductor region isdirectly bonded with a layer of the second semiconductor region, whereinthe layer of the first semiconductor region is composed of indiumphosphide, and wherein the layer of the second semiconductor region iscomposed of silicon. In various embodiments, the apparatus furthercomprises a first electrical contact coupled with the active region ofthe first semiconductor region, and a second electrical contact coupledwith the indium phosphide layer of the first semiconductor region. Invarious embodiments, the apparatus further comprises a first electricalcontact coupled with the active region of the first semiconductorregion, and a second electrical contact coupled with the silicon layerof the second semiconductor region.

In various embodiments, the layers of the first semiconductor regioncomprise at least one of an ohmic contact layer coupled with a firstelectrical contact layer, a cladding layer coupled with the ohmiccontact layer, a separated confinement hetero-structure (SCH) layercoupled with the cladding layer, a carrier blocking layer coupled withthe

SCH layer, a multiple quantum well (MQW) layer coupled with the SCHlayer, and an indium phosphide layer coupled with the MQW layer, whereina surface of the indium phosphide layer is coupled with a surface of alayer of the second semiconductor region.

In various embodiments, the second semiconductor region comprises asilicon-on-insulator structure.

All optional features of the apparatuses described above may also beimplemented with respect to various systems described herein. Forexample, in various embodiments, a system may include one or more of thehybrid lasers described above. In various embodiments, system includes areceiver to receive an optical signal. In various embodiments, thesystem includes a transmitter to transmit the optical signal. In variousembodiments, the transmitter may comprise the hybrid laser to generate alaser beam.

In various embodiments, the system further comprises a modulator coupledto the hybrid laser to modulate the laser beam transmitted over thesilicon waveguide. In various embodiments, the receiver comprises aphoto-detector to detect the modulated laser beam.

In various embodiments, the system further comprises a processoroperatively coupled with the receiver and the transmitter, and a displaydevice operatively coupled to the processor. In various embodiments, thedisplay device is a touch screen.

In various embodiments, the system is a selected one of a laptop, anotebook, a notebook, an ultrabook, a smartphone, a tablet, a personaldigital assistant, an ultra mobile PC, a mobile phone, a desktopcomputer, a server, a printer, a scanner, a monitor, a set-top box, anentertainment control unit, a digital camera, a portable music player,or a digital video recorder.

All optional features of the apparatuses and systems described above mayalso be implemented in various methods. For example, in variousembodiments, a method for making a hybrid laser comprises providing afirst semiconductor region including an active region of one or morelayers of semiconductor materials from group III, group IV, or group Vsemiconductor. In various embodiments, the method further comprisesforming a first trench on a first side of an optical waveguide of asecond semiconductor region, and a second trench on a second side,opposite the first side, of the optical waveguide. In variousembodiments, the method further comprises coupling the firstsemiconductor region with the second semiconductor region.

In various embodiments, the method further comprises defining theoptical waveguide in the second semiconductor region by forming a pairof waveguide trenches, wherein the optical waveguide is disposed betweenthe pair of waveguide trenches.

In various embodiments, the method further comprises forming a thirdtrench on the first side of the optical waveguide such that the firsttrench is between the third trench and the optical waveguide, andforming a fourth trench on the second side of the optical waveguide suchthat the second trench is between the fourth trench and the opticalwaveguide.

Various aspects of the illustrative implementations are described hereinusing terms commonly employed by those skilled in the art to convey thesubstance of their work to others skilled in the art. It will beapparent to those skilled in the art, however, that embodiments of thepresent invention may be practiced with only some of the describedaspects. For purposes of explanation, specific numbers, materials andconfigurations are set forth in order to provide a thoroughunderstanding of the illustrative implementations. It will be apparentto one skilled in the art, however, that embodiments of the presentinvention may be practiced without the specific details. In otherinstances, well-known features are omitted or simplified in order not toobscure the illustrative implementations.

Further, various operations are described as multiple discreteoperations, in turn, in a manner that is most helpful in understandingthe illustrative embodiments; however, the order of description shouldnot be construed as to imply that these operations are necessarily orderdependent. In particular, these operations need not be performed in theorder of presentation. Moreover, methods within the scope of thisdisclosure may include more or fewer steps than those described.

The phrase “in some embodiments” and “in various embodiments” are usedrepeatedly. The phrase generally does not refer to the same embodiments;however, it may. The terms “comprising,” “having,” and “including” aresynonymous, unless the context dictates otherwise. The phrase “A and/orB” means (A), (B), or (A and B). The phrase “A/B” means (A), (B), or (Aand B), similar to the phrase “A and/or B”. The phrase “at least one ofA, B and C” means (A), (B), (C), (A and B), (A and C), (B and C) or (A,B and C). The phrase “(A) B” means (B) or (A and B), that is, A isoptional.

Although various example methods, apparatuses, and systems have beendescribed herein, the scope of coverage of the present disclosure is notlimited thereto. On the contrary, the present disclosure covers allmethods, apparatus, systems, and articles of manufacture fairly fallingwithin the scope of the appended claims, which are to be construed inaccordance with established doctrines of claim interpretation. Forexample, although the above discloses example systems including, amongother components, software or firmware executed on hardware, it shouldbe noted that such systems are merely illustrative and should not beconsidered as limiting. In particular, it is contemplated that any orall of the disclosed hardware, software, and/or firmware componentscould be embodied exclusively in hardware, exclusively in software,exclusively in firmware or in some combination of hardware, software,and/or firmware.

1. A hybrid laser apparatus comprising: a first semiconductor regionincluding an active region of one or more layers of semiconductormaterials from group III, group IV, or group V semiconductor; and asecond semiconductor region coupled with the first semiconductor regionand having an optical waveguide, a first trench disposed on a first sideof the optical waveguide, and a second trench disposed on a second side,opposite the first side, of the optical waveguide.
 2. The apparatus ofclaim 1, wherein the optical waveguide is defined by a pair of waveguidetrenches.
 3. The apparatus of claim 1, wherein the second semiconductorregion includes: a third trench disposed on the first side of theoptical waveguide such that the first trench is between the third trenchand the optical waveguide, and a fourth trench disposed on the secondside of the optical waveguide such that the second trench is between thefourth trench and the optical waveguide.
 4. The apparatus of claim 1,wherein a layer of the first semiconductor region is directly bondedwith a layer of the second semiconductor region, wherein the layer ofthe first semiconductor region is composed of indium phosphide, andwherein the layer of the second semiconductor region is composed ofsilicon.
 5. The apparatus of claim 4, further comprising: a firstelectrical contact coupled with the active region of the firstsemiconductor region; and a second electrical contact coupled with theindium phosphide layer of the first semiconductor region.
 6. Theapparatus of claim 4, further comprising: a first electrical contactcoupled with the active region of the first semiconductor region; and asecond electrical contact coupled with the silicon layer of the secondsemiconductor region.
 7. The apparatus of claim 1, wherein the layers ofthe first semiconductor region comprise: an ohmic contact layer coupledwith a first electrical contact layer; a cladding layer coupled with theohmic contact layer; a separated confinement hetero-structure (SCH)layer coupled with the cladding layer; a carrier blocking layer coupledwith the SCH layer; a multiple quantum well (MQW) layer coupled with theSCH layer; and an indium phosphide layer coupled with the MQW layer,wherein a surface of the indium phosphide layer is coupled with asurface of a layer of the second semiconductor region.
 8. The apparatusof claim 1, wherein the second semiconductor region comprises asilicon-on-insulator structure.
 9. A system including one or more hybridlasers, the system comprising: a receiver to receive an optical signal;and a transmitter to transmit the optical signal, the transmittercomprising a hybrid laser to generate a laser beam, the hybrid laserincluding: a first semiconductor region including an active region ofone or more layers of semiconductor materials from group III, group IV,or group V semiconductor; and a second semiconductor region coupled withthe first semiconductor region and having a optical waveguide, a firsttrench disposed on a first side of the optical waveguide, and a secondtrench disposed on a second side, opposite the first side, of theoptical waveguide.
 10. The system of claim 9, further comprising amodulator coupled to the hybrid laser to modulate the laser beamtransmitted over the silicon waveguide.
 11. The system of claim 10,wherein the receiver comprises a photo-detector to detect the modulatedlaser beam.
 12. The system of claim 9, wherein the optical waveguide isdefined by a pair of waveguide trenches.
 13. The system of claim 9,wherein the second semiconductor region includes: a third trenchdisposed on the first side of the optical waveguide such that the firsttrench is between the third trench and the optical waveguide, and afourth trench disposed on the second side of the optical waveguide suchthat the second trench is between the fourth trench and the opticalwaveguide.
 14. The system of claim 9, wherein a layer of the firstsemiconductor region is directly bonded with a layer of the secondsemiconductor region, wherein the layer of the first semiconductorregion is composed of indium phosphide, and wherein the layer of thesecond semiconductor region is composed of silicon.
 15. The system ofclaim 14, further comprising: a first electrical contact coupled withthe active region of the first semiconductor region; and a secondelectrical contact coupled with the indium phosphide layer of the firstsemiconductor region.
 16. The system of claim 14, further comprising: afirst electrical contact coupled with the active region of the firstsemiconductor region; and a second electrical contact coupled with thesilicon layer of the second semiconductor region.
 17. The system ofclaim 9, wherein the layers of the first semiconductor region comprise:an ohmic contact layer coupled with a first electrical contact layer; acladding layer coupled with the ohmic contact layer; a separatedconfinement hetero-structure (SCH) layer coupled with the claddinglayer; a carrier blocking layer coupled with the SCH layer; a multiplequantum well (MQW) layer coupled with the SCH layer; and an indiumphosphide layer coupled with the MQW layer, wherein a surface of theindium phosphide layer is coupled with a surface of a layer of thesecond semiconductor region.
 18. The system of claim 9, wherein thesecond semiconductor region comprises a silicon-on-insulator structure.19. The system of claim 9, further comprising a processor operativelycoupled with the receiver and the transmitter, and a display deviceoperatively coupled to the processor.
 20. The system of claim 19,wherein the display device is a touch screen.
 21. The system of claim 9,wherein the system is a selected one of a laptop, a netbook, a notebook,an ultrabook, a smartphone, a tablet, a personal digital assistant, anultra mobile PC, a mobile phone, a desktop computer, a server, aprinter, a scanner, a monitor, a set-top box, an entertainment controlunit, a digital camera, a portable music player, or a digital videorecorder.
 22. A method for making a hybrid laser, comprising: providinga first semiconductor region including an active region of one or morelayers of semiconductor materials from group III, group IV, or group Vsemiconductor; forming a first trench on a first side of an opticalwaveguide of a second semiconductor region, and a second trench on asecond side, opposite the first side, of the optical waveguide; couplingthe first semiconductor region with the second semiconductor region. 23.The method of claim 22, further comprising defining the opticalwaveguide in the second semiconductor region by forming a pair ofwaveguide trenches, wherein the optical waveguide is disposed betweenthe pair of waveguide trenches.
 24. The method of claim 22, furthercomprising: forming a third trench on the first side of the opticalwaveguide such that the first trench is between the third trench and theoptical waveguide, and forming a fourth trench on the second side of theoptical waveguide such that the second trench is between the fourthtrench and the optical waveguide.